Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors

Zheng, X. J.; Sun, J.; Zhang, J. J.; Tang, M. H.; Li, W.
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p213501
Academic Journal
It is recognized that the conventional model for metal-ferroelectric-insulator-silicon (MFIS) capacitor is always not consistent with the experimental observation very well due to negligence of the history-dependent electric field effect. In this letter, combining the switching physics of ferroelectric with silicon physics, an improved model is proposed to investigate the capacitance-voltage (C-V) characteristic and memory window. For two MFIS capacitors with SrBi2Ta2O9 and Bi3.25La0.75Ti3O12 ferroelectric layers, C-V characteristic and memory window were evaluated, and the results are more consistent with the previous experiments than that of the Lue model. The improved model could be extendedly applied to MFIS structure devices.


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