Similarities in the kinetics of photocrystallization and photodarkening in a-Se

Tallman, Robert E.; Reznik, A.; Weinstein, B. A.; Baranovskii, S. D.; Rowlands, J. A.
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212103
Academic Journal
The onset time of photocrystallization (PC) as a function of temperature in a-Se films designed for avalanche photodetectors is explored using Raman scattering experiments. The PC onset time τon is compared to the time-constant τIPD for irreversible photodarkening (IPD) studied in earlier work. Both τon and τIPD exhibit activated thermal behavior mediated by an energy barrier EB∼0.7–0.95 eV. We suggest that the formation kinetics of PC and IPD in a-Se are governed by the same energy surface and configuration changes, occurring via photoinduced defects during the primary stage of crystallization.


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