Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric

Wangyang Fu; Zhi Xu; Kaihui Liu; Wenlong Wang; Xuedong Bai; Enge Wang
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p213107
Academic Journal
In this letter, amorphous Bi1.5Zn1.0Nb1.5O7 films with large permittivity (∼70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature (∼100 °C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (<3 V), a high carrier mobility (∼42 cm2/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi1.5Zn1.0Nb1.5O7 dielectric is a promising candidate for high-performance flexible electronics.


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