TITLE

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

AUTHOR(S)
Pyun, Myeongbum; Choi, Hyejung; Park, Ju-Bong; Lee, Dongsoo; Hasan, Musarrat; Dong, Rui; Jung, Seung-Jae; Lee, Joonmyoung; Seong, Dong-jun; Yoon, Jaesik; Hwang, Hyunsang
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 104 s at 85 °C, confirming good retention characteristics.
ACCESSION #
35605029

 

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