High quantum efficiency back-illuminated GaN avalanche photodiodes

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.; Ulmer, M. P.; Silversmith, D.
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p211107
Academic Journal
Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.


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