Reversible charge injection in antiferroelectric thin films

Jiang, A. Q.; Tang, T. A.; Corkovic, S.; Zhang, Q.
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212908
Academic Journal
High-energy storage antiferroelectric capacitors operated in a high speed require the quick release of stored charges after the removal of the electrical field accompanying ferroelectric-to-antiferroelectric phase transition. However, the phase-transition time can vary from a few nanoseconds to milliseconds due to the reversible charge injection into the film to temporally stabilize the high-field ferroelectric phase. The consequent theoretical modeling discloses the nearly Ohmic contact of an antiferroelectric Au/Cr/Pb(Zr0.95Ti0.05)O3/Pt thin-film capacitor for the charge injection unlike the Schottky emission of a typical ferroelectric capacitor.


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