TITLE

Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

AUTHOR(S)
Khan, M. Ziaur Rahman; Hasko, D. G.; Saifullah, M. S. M.; Welland, M. E.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p193501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The transient behavior of a trapped electron in the TiO2 sol-gel based gate dielectric layer of a silicon-on-insulator metal-oxide-semiconductor field effect transistor is investigated. Defects in this dielectric layer give rise to microwave resonances that are electrically detected via the channel current. The lifetime of the excited state is inferred from the quality factor of the resonance. A single shot measurement, carried out on the same resonance, is used to characterize the transient behavior and to directly measure the lifetime of the excited state. Possible applications of transient measurements on high-k dielectric layers are discussed.
ACCESSION #
35514340

 

Related Articles

  • Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor field effect transistors. Prati, Enrico; Fanciulli, Marco; Calderoni, Alessandro; Ferrari, Giorgio; Sampietro, Marco // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p104502 

    Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here, the variation of...

  • Chemical image generation with a grid-gate device. Filippini, D.; Gunnarsson, J.; Lundström, I. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7583 

    Scanning light pulse technique generating distinctive chemical images of diverse gases is demonstrated using a sensing arrangement that allows unrestricted choice of sensing materials, disregarding its conductivity or morphology. The present device, a metal oxide semiconductor structure,...

  • Clamp SIZING.  // Electronics World;Mar2011, Vol. 117 Issue 1899, p26 

    The article discusses the design of effective protection circuits with reliable metal oxide semiconductor field effect transistor (MOSFET) flyback power supplies in Great Britain. It states that one can use a clamp circuit to limit the amount of voltage that enters the MOSFET. Moreover, steps on...

  • Low-cost and nanoscale non-volatile memory concept for future silicon chips. Lankhorst, Martijn H. R.; Ketelaars, Bas W. S. M. M.; Wolters, R. A. M. // Nature Materials;Apr2005, Vol. 4 Issue 4, p347 

    Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great commercial success, the semiconductor industry is searching for alternative non-volatile memories with improved performance and better...

  • Ab initio calculation of effective work functions for a TiN/HfO2/SiO2/Si transistor stack. Prodhomme, Pierre-Yves; Fontaine-Vive, Fabien; Geest, Abram Van Der; Blaise, Philippe; Even, Jacky // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p022101 

    Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its...

  • Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors. Chiang, Sinclair; Lu, M. F.; Huang-Lu, S.; Chien, S. C.; Tahui Wang // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p024105 

    An explanation of the breakdown behavior of ultrathin-gate-oxide (1.6 nm) p-metal-oxide-semiconductor field-effect transistors under a reverse substrate bias is presented. A significant degradation in lifetime induced by a positive substrate bias and a decrease in the power-law exponent (n) were...

  • Target diagnostic technology research and development for the LLNL ICF and HED program (invited). Bell, P. M.; Landen, O. L.; Weber, F. A.; Lowry, M. E.; Bennett, C. V.; Kimbrough, J. R.; Moody, J. D.; Holder, J. P.; Lerche, R. A.; Griffith, R. L.; Park, H. S.; Boni, R.; Jaanimagi, P. A.; Davies, T. // Review of Scientific Instruments;Oct2004 Part I & II, Vol. 75 Issue 10, p4200 

    The National Ignition Facility is operational at Lawrence Livermore National Laboratory (LLNL). The inertial confinement fusion and HED programs at LLNL have formed diagnostic research and development groups to institute improvements outside the charter of core diagnostics. We will present data...

  • Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices. Zimmerman, Neil M.; Hourdakis, Emmanouel; Ono, Yuki; Fujiwara, Akira; Takahashi, Yasuo // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p5254 

    Si-based single-electron tunneling (SET) devices have of late become an important alternative to the metal-based ones, both for ultralarge scale integration (ULSI) electronics and for electrical metrology. We have very recently been designing, fabricating, and measuring SET turnstiles, pumps,...

  • Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures. Chucheva, G.; Zhdan, A.; Akhmedov, G.; Kukharskaya, N. // Instruments & Experimental Techniques;Jul/Aug2005, Vol. 48 Issue 4, p498 

    A metal-oxide-semiconductor (MOS) structure with the common field electrode insulated from the semiconductor by oxide layers h of different thicknesses allows the surface generation rate of minority charge carriers from current I( t) of nonequilibrium depletion state relaxation to be found. At...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics