TITLE

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

AUTHOR(S)
Shah, V. A.; Dobbie, A.; Myronov, M.; Fulgoni, D. J. F.; Nash, L. J.; Leadley, D. R.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si1-xGex buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their characterization. Relaxed Ge is first grown on the substrate followed by the reverse grading approach to reach a final buffer composition of 0.78. The optimized buffer structure is only 2.8 μm thick and demonstrates a low surface threading dislocation density of 4×106 cm-2, with a surface roughness of 2.6 nm. The buffers demonstrate a relaxation of up to 107%.
ACCESSION #
35514334

 

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