GaN-nanowire/amorphous-Si core-shell heterojunction diodes

Motayed, Abhishek; Davydov, Albert V.
November 2008
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p193102
Academic Journal
We report the electrical characterization of gallium-nitride/amorphous-silicon (n-type nanowire/p-type shell) diodes fabricated by postgrowth silicon shell formation technique. The n-type (unintentionally doped) gallium-nitride (GaN) nanowires were aligned on prepatterned sapphire substrates using dielectrophoresis. The amorphous silicon (a-Si) shell was deposited using plasma enhanced chemical vapor deposition technique and doped using spin-on boron dopant. Using photolithography, plasma etching, and metal deposition, complete p-n (p-type a-Si shell on n-type GaN nanowire) heterojunction diodes were developed. These diodes had reliable electrical characteristics with 1 V forward turn-on voltage. These nanowire core-shell heterojunction diodes exhibited negative differential resistance, which can be explained by phonon-assisted interband tunneling mechanism.


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