Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

Chen, K. X.; Dai, Q.; Lee, W.; Kim, J. K.; Schubert, E. F.; Grandusky, J.; Mendrick, M.; Li, X.; Smart, J. A.
November 2008
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192108
Academic Journal
The effect of edge and screw dislocations on the electrical and optical properties of n-type Al0.34Ga0.66N is investigated. It is found that edge dislocations strongly affect the electrical properties of n-type Al0.34Ga0.66N. Both free carrier concentration and mobility decrease with increasing edge dislocation density. Edge dislocations also enhance nonradiative recombination, which is indicated by decreasing near-band-edge UV as well as parasitic blue photoluminescence. The UV/blue ratio is found to be independent of the edge dislocation density but strongly depends on the Si doping concentration.


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