Effects of p-doping on the thermal sensitivity of individual Si nanowires

Brioude, A.; Cornu, D.; Miele, P.; Mouchet, C.; Simonato, J.-P; Rouvière, E.
November 2008
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p193105
Academic Journal
A gradual downshift and broadening of the Si optical phonon peak was observed by Raman scattering measurements on individual undoped and p-doped silicon nanowire (SiNW) when heated by a laser beam. This dual effect can be interpreted by an induced compressive stress resulting from structural defects. The p-doped SiNW was shown to be the most sensitive to heating and its structure was clearly modified with a large diffusion of gold atoms forming numerous gold nanoparticles.


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