TITLE

Space-charge trap mediated conductance blockade in tunnel junctions with half-metallic electrodes

AUTHOR(S)
Feng, J. F.; Kim, T.-H.; Han, X. F.; Zhang, X.-G.; Wang, Y.; Zou, J.; Yu, D. B.; Yan, H.; Li, A. P.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A conductance blockade effect has been observed in the magnetic tunnel junction consisting of La0.7Sr0.3MnO3 electrodes and a SrTiO3 barrier. The blockade effect is correlated with the space-charge trap states in the barrier. The blockade threshold eVB=128 meV is significantly greater than Coulomb charging energy EC=11 meV. The blockade can be lifted with a magnetic field, accompanied by a very large magnetoresistance up to 10 000%. The intriging blockade behavior is distinctly different from the conventional Coulomb blockade effect, showing a unique spin-dependent tunneling process mediated by the localized charge trap states.
ACCESSION #
35514303

 

Related Articles

  • Tunneling spectroscopy in CoFeB/MgO/CoFeB magnetic tunnel junctions. Ono, Kazunaga; Daibou, Tadaomi; Sung-Jin Ahn; Sakuraba, Yuya; Miyakoshi, Takefumi; Morita, Tadashi; Kikuchi, Yukio; Oogane, Mikihiko; Ando, Yasuo; Miyazaki, Terunobu // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08A905 

    The d2V/dI2-V measurements were used to investigate the tunneling mechanism in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs), which showed a giant tunnel magnetoresistance ratio up to 200% at room temperature. The d2V/dI2-V spectra of CoFeB/MgO/CoFeB junctions resemble those of single-crystal...

  • Current-perpendicular-to-plane giant magnetoresistance in spin-valve structures using epitaxial Co2FeAl0.5Si0.5/Ag/Co2FeAl0.5Si0.5 trilayers. Furubayashi, T.; Kodama, K.; Sukegawa, H.; Takahashi, Y. K.; Inomata, K.; Hono, K. // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122507 

    A current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve using epitaxial layers of Co2FeAl0.5Si0.5 (CFAS) Heusler alloy as ferromagnetic electrodes is reported. A multilayer stack of Cr/Ag/CFAS/Ag/CFAS/Co75Fe25/Ir22Mn78/Ru was deposited on a MgO (001) single crystal...

  • Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode. Ebke, D.; Schmalhorst, J.; Liu, N.-N.; Thomas, A.; Reiss, G.; Hütten, A. // Applied Physics Letters;10/16/2006, Vol. 89 Issue 16, p162506 

    Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi/Co2FeSi]x10 multilayer electrodes the...

  • Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier. Tsunegi, Sumito; Sakuraba, Yuya; Oogane, Mikihiko; Takanashi, Koki; Ando, Yasuo // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112506 

    A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we...

  • Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode. Okamura, S.; Miyazaki, A.; Sugimoto, S.; Tezuka, N.; Inomata, K. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232503 

    Magnetic tunnel junctions (MTJs) with a Co2FeAl Heusler alloy electrode are fabricated by the deposition of the film using an ultrahigh vacuum sputtering system followed by photolithography and Ar ion etching. A tunnel magnetoresistance (TMR) of 47% at room temperature (RT) are obtained in a...

  • Sign of tunneling magnetoresistance in CrO2-based magnetic tunnel junctions. Leo, Titus; Kaiser, Christian; Yang, Hyunsoo; Parkin, Stuart S. P.; Sperlich, Martin; Güntherodt, Gernot; Smith, David J. // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p252506 

    Half-metallic ferromagnets are potentially useful as electrodes in magnetic tunnel junctions (MTJs) because of the possibility for 100% spin polarization near the Fermi energy. We report tunneling magnetoresistance (TMR) behavior of MTJs having epitaxial CrO2(100) as one electrode, CoFe as...

  • Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy. Feng, G.; Wu, H. C.; Feng, J. F.; Coey, J. M. D. // Applied Physics Letters;7/25/2011, Vol. 99 Issue 4, p042502 

    We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature...

  • Giant magnetoresistance in TI2Mn2O7 with the pyrochlore... Shimakawa, Y.; Kubo, Y. // Nature;1/4/1996, Vol. 379 Issue 6560, p53 

    Reports on materials exhibiting giant magnetoresistance (GMR) which undergo a large change in electrical resistance in response to an applied magnetic field. What is GMR; Observations of GMR on TI2Mn2O7; Structure of GMR; Findings from observations.

  • Erratum: "Tuning spin transport properties and molecular magnetoresistance through contact geometry" [J. Chem. Phys. 140, 044716 (2014)].  // Journal of Chemical Physics;6/14/2014, Vol. 140 Issue 22, p229903-1 

    A correction to the article "Tuning spin transport properties and molecular magnetoresistance through contact geometry" that was published online in the June 13, 2014 issue is presented.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics