Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

Nomura, Kenji; Kamiya, Toshio; Ohta, Hiromichi; Hirano, Masahiro; Hosono, Hideo
November 2008
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192107
Academic Journal
Roles of H2O addition to an annealing atmosphere were investigated for amorphous In–Ga–Zn–O thin-film transistors fabricated at room temperature. Although dry O2 annealing improved saturation mobility (μsat) and subthreshold voltage swings (S), wet O2 annealing further improved them to μsat∼12 cm2(V s)-1 and S<0.12 V decade-1 along with improvement of their uniformity. Desorption of OH-related species caused conductivity increase during thermal annealing at <310 °C. Zn–O components started to desorb at ∼300 °C for the unannealed and the dry O2 annealed films, while these were suppressed remarkably by the wet O2 annealing.


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