TITLE

Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films

AUTHOR(S)
Jinesh, K. B.; Lamy, Y.; Wolters, R. A. M.; Klootwijk, J. H.; Tois, E.; Roozeboom, F.; Besling, W. F. A.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192912
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon.
ACCESSION #
35514288

 

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