High quality AlN grown on SiC by metal organic chemical vapor deposition

Chen, Z.; Newman, S.; Brown, D.; Chung, R.; Keller, S.; Mishra, U. K.; Denbaars, S. P.; Nakamura, S.
November 2008
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p191906
Academic Journal
Growth conditions for AlN in two dimensional (2D) and three dimensional (3D) growth modes were explored on SiC using metal organic chemical vapor deposition. High quality AlN layers were obtained by alternating between 3D and 2D growth modes, referred to as modulation growth (MG). Long parallel atomic terraces without step terminations were observed in atomic force microscopy (AFM) scans of MG AlN, indicating a reduced dislocation density. X-ray diffraction rocking curves yielded full widths at half maximum (FWHM) of 86 and 363 arc sec for the (002) and (102) reflections, respectively, giving further evidence of low dislocation density in the film. 3D-2D MG also releases some of the tensile strain in the AlN film, enabling the growth of thick, crack-free AlN on SiC substrates.


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