TITLE

20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

AUTHOR(S)
Moongyu Jang; Cheljong Choi; Seongjae Lee
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
20-nm-gate-length erbium-/platinum-silicided n-/p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm-gate-length n-/p-type SB-MOSFETs showed large on/off current ratio (>106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2/-2 and 3/-3 V, for the n-/p-type SB-MOSFET, respectively.
ACCESSION #
35514241

 

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