TITLE

Ab initio study of electron-phonon coupling in boron-doped SiC

AUTHOR(S)
Margine, E. R.; Blase, X.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p192510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Density functional theory calculations have been used to study the electronic structure, lattice dynamics, and electron-phonon coupling in boron-doped silicon carbide in the cubic phase. Our results provide evidence that the recently discovered superconducting transition in boron-doped silicon carbide can be explained within a standard phonon-mediated mechanism. For the same doping rate, the coupling constant λ in B-doped SiC is very close to that of doped diamond and twice as large as that of B-doped silicon. However, doped silicon carbide differs from its diamond counterpart as most of the electron-phonon coupling originates from low energy vibrational modes.
ACCESSION #
35514231

 

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