Raman characterization of Ge distribution in individual Si1-xGex alloy nanowires

Nishimura, Chiharu; Imamura, Go; Fujii, Minoru; Kawashima, Takahiro; Saitoh, Tohru; Hayashi, Shinji
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203101
Academic Journal
The distribution of Ge composition in an individual Si1-xGex alloy nanowire (SiGeNW) grown by the vapor liquid solid (VLS) process was studied by micro-Raman spectroscopy by changing the measurement position from the catalyst side to the substrate side. The Si–Si mode in Raman spectra were found to split into two peaks and the intensity ratio as well as the wavenumbers of the two peaks depended on the measurement position. The Raman data revealed that SiGeNWs have a core-shell structure with a low-Ge composition core grown by the VLS process covered with a high-Ge composition shell grown by the conformal deposition.


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