Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

Sakr, M. R.; Gao, X. P. A.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203503
Academic Journal
We studied the low frequency noise in indium arsenide (InAs) nanowire field effect transistors at different temperatures and gate voltages. Mostly, the excess noise had 1/f dependence except at low temperatures and gate voltages close to the threshold value where the noise changed gradually to Lorentzian. The Hooge’s parameter showed thermally activated behavior with minimum value ∼5×10-4. The distribution of activation energies of the fluctuators responsible for the noise was found to have broad minima associated with the characteristic temperature of the thermally activated Hooge’s parameter.


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