Low specific contact resistance of heavily phosphorus-doped diamond film

Kato, Hiromitsu; Umezawa, Hitoshi; Tokuda, Norio; Takeuchi, Daisuke; Okushi, Hideyo; Yamasaki, Satoshi
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202103
Academic Journal
Low resistive contacts were formed on heavily phosphorus-doped diamond (n+) films with phosphorus concentration of over ∼1020 cm-3 grown on (111) diamond substrates by microwave plasma enhanced chemical vapor deposition with precise control of growth conditions. The specific contact resistance was determined by characterizing the current-voltage relations by means of transfer length method. It was found that the resistance of Ti/n+ contact was significantly reduced down to the order of ∼10-3 Ω cm2 even at room temperature, which indicates that the barrier width would be narrow for tunneling through the barrier to take place by heavy phosphorus doping.


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