Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging

Chaji, Gholamreza; Nathan, Arokia; Pankhurst, Quentin
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203504
Academic Journal
A top-illuminated, nonoffset amorphous silicon (a-Si) photo thin-film transistor structure is presented for biomolecular imaging applications. The device yields a high gate-modulated response to near infrared wavelengths, enhanced by trapped assisted absorption in the transistor. In addition, its flicker noise power is reduced by more than a factor of 3 by means of a switched biasing technique. Since the image sensor, readout, and amplification are the same elements, the pixel size can be made relatively small, enabling high resolution imaging capability over large area using standard, low-cost flat-panel technology.


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