Thickness inhomogenities in the organometallic chemical vapor deposition of GaP

Liu, X.; Aspnes, D. E.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203104
Academic Journal
We analyze exponential lateral-thickness variations observed in the growth of GaP on (001) GaAs, thermally generated SiO2, (001) Si, and nanoscopically roughened Si surfaces by organometallic chemical vapor deposition, using as a reference the polycrystalline GaP deposited on the Mo susceptor surrounding the 2 in. wafers. We find these variations to be due to differences in the chemical reactivities of the various surfaces toward the generation of a precursor, probably a H–P=Ga–CH3 dimer adduct, by heterogeneous catalysis followed by desorption and diffusion through the gas phase.


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