Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

Milojevic, M.; Aguirre-Tostado, F. S.; Hinkle, C. L.; Kim, H. C.; Vogel, E. M.; Kim, J.; Wallace, R. M.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202902
Academic Journal
The reduction in III–V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS). TMA is found to reduce the interfacial oxides during the initial exposure. Concentrations of Ga oxide on the surface processed at 300 °C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS.


Related Articles

  • Photoelectron spectroscopy of cold aluminum cluster anions: Comparison with density functional theory results. Lei Ma; Issendorff, Bernd v.; Aguado, Andrés // Journal of Chemical Physics;3/14/2010, Vol. 132 Issue 10, p104303 

    Photoelectron spectra of cold aluminum cluster anions Aln- have been measured in the size range n=13–75 and are compared to the results of density functional theory calculations. Good agreement between the measured spectra and the calculated density of states is obtained for most sizes,...

  • Chemically resolved electrical measurements using x-ray photoelectron spectroscopy. Cohen, Hagai // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1271 

    Noncontact chemically resolved electrical measurements are presented, capable of probing selected regions within fine heterostructures. Using a slightly modified x-ray photoelectron spectrometer, an effective means is demonstrated for measuring I–V curves of molecular layers, free of...

  • Changes in the surface properties of plasma-modified polyfluoroolefin films during storage and heating. Piskarev, M.; Batuashvili, M.; Gil'man, A.; Yablokov, M.; Kuznetsov, A. // High Energy Chemistry;Jan2012, Vol. 46 Issue 1, p65 

    Changes in the wettability and surface contact properties of polytetrafluoroethylene (PTFE) and tetrafluoroethylene-ethylene copolymer films modified in a direct current discharge at the cathode and anode depending on the storage time in air at room temperature and on heating to 200°C have...

  • Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment. Kang, Jung Han; Namkyu Cho, Edward; Eun Kim, Chang; Lee, Min-Jung; Jeong Lee, Su; Myoung, Jae-Min; Yun, Ilgu // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p222103 

    The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An...

  • Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack. Mahapatra, R.; Chakraborty, Amit K.; Horsfall, A. B.; Wright, N. G.; Beamson, G.; Coleman, Karl S. // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p042904 

    The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the...

  • X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface. Zhu, L. Q.; Barrett, N.; Jégou, P.; Martin, F.; Leroux, C.; Martinez, E.; Grampeix, H.; Renault, O.; Chabli, A. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 2, pN.PAG 

    The presence of an ultrathin oxide layer at the high-k/SiO2 interface may result in an interfacial dipole related to the specific high-k dielectric used for the gate stacks. 1 nm HfO2/x nmAl2O3/SiO2/Si stacks with different x values (x=0, 0.4, 0.8, 1.2) have been prepared by atomic layer...

  • Photofragmentation study of hexamethyldisiloxane following core ionization and direct double ionization. Céolin, D.; Miron, C.; Le Guen, K.; Guillemin, R.; Morin, P.; Shigemasa, E.; Millié, P.; Ahmad, M.; Lablanquie, P.; Penent, F.; Simon, M. // Journal of Chemical Physics;12/15/2005, Vol. 123 Issue 23, p234303 

    X-ray photoelectron spectroscopy and Auger spectroscopy studies of gas-phase hexamethyldisiloxane (HMDSO) are presented. The photodissociation of this molecule is studied using various experimental coincidence techniques. We compare the fragmentation pathways observed after core ionization...

  • Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing. Kang-Ill Seo; McIntyre, Paul C.; Hyoungsub Kim; Saraswat, Krishna C. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p082904 

    In this letter, we demonstrate that formation of a Zr-silicate interfacial layer between ZrO2 and Si substrate can be controlled by the solid state reaction between Zr and an underlying SiO2/Si substrate through in situ vacuum anneals and subsequent UV oxidation. By investigating the chemical...

  • Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties. Watanabe, Heiji; Hosoi, Takuji; Kirino, Takashi; Kagei, Yusuke; Uenishi, Yusuke; Chanthaphan, Atthawut; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p021907 

    The correlation between atomic structure and the electrical properties of thermally grown SiO2/4H-SiC(0001) interfaces was investigated by synchrotron x-ray photoelectron spectroscopy together with electrical measurements of SiC-MOS capacitors. We found that the oxide interface was dominated by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics