TITLE

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

AUTHOR(S)
Milojevic, M.; Aguirre-Tostado, F. S.; Hinkle, C. L.; Kim, H. C.; Vogel, E. M.; Kim, J.; Wallace, R. M.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reduction in III–V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS). TMA is found to reduce the interfacial oxides during the initial exposure. Concentrations of Ga oxide on the surface processed at 300 °C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS.
ACCESSION #
35514104

 

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