Dynamic-gate operation in nanoelectronic amplifiers due to reduced screening

Worschech, L.; Hartmann, D.; Forchel, A.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203105
Academic Journal
Semiconductor nanostructures in shape of a Y were patterned lithographically in a two-dimensional electron gas. One of the branches was pinched off, so it can act as a gate for the other branch. Such nanoelectronic amplifiers show switching voltages smaller than the thermal limit and tunable bistability. The authors related their observations to a reduced-screening induced dynamic capacitance, which can exceed the contribution from the geometric capacitance.


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