TITLE

Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate

AUTHOR(S)
Tripathy, Suvranta K.; Guibao Xu; Xiaodong Mu; Ding, Yujie J.; Jamil, Muhammad; Arif, Ronald A.; Tansu, Nelson; Khurgin, Jacob B.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p201107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Phonon-assisted anti-Stokes photoluminescence (ASPL) in the ultraviolet region has been observed in the GaN film grown on a Si (111) substrate. The ASPL peaks are observable only at sufficiently low temperatures. In addition, even if the photon energy is ≈318 meV below the transition energy for bound excitons, the ASPL peaks can be still observed. Based on our analysis, the donor-acceptor pairs and bound excitons have played primary roles in the generation of ASPL. Upon the absorption of photons, the ionizations of the neutral donors and neutral acceptors are assisted by longitudinal-optical phonons.
ACCESSION #
35514099

 

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