Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Paladugu, Mohanchand; Jin Zou; Ya-Nan Guo; Xin Zhang; Joyce, Hannah J.; Qiang Gao; Tan, H. Hoe; Jagadish, C.; Yong Kim
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p201908
Academic Journal
The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the {112}A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.


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