TITLE

Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

AUTHOR(S)
Matsuzaki, Kosuke; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cu2O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities ∼90 cm2 V-1 s-1 comparable to those of single crystals (∼100 cm2 V-1 s-1). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (∼0.26 cm2 V-1 s-1 and ∼6, respectively).
ACCESSION #
35514092

 

Related Articles

  • Phase field simulations of low-dimensional ferroelectrics. Jie Wang; Kamlah, Marc; Tong-Yi Zhang // Acta Mechanica;Oct2010, Vol. 214 Issue 1/2, p49 

    This paper reviews the previous work on phase field simulations of low-dimensional ferroelectrics of two-dimensional epitaxial ferroelectric islands, thin films, and nanoparticles. The simulations are conducted in real space with exact boundary conditions of a low-dimensional ferroelectric, but...

  • Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap. Shafarman, William N.; Klenk, Reiner; McCandless, Brian E. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7324 

    Presents information on a study that characterized the performance of solar cells fabricated from Cu(InGa)Se[sub2] films with no intentional compositional gradients as the gallium content and band gap are increased. Experimental procedure; Results and discussion on the study.

  • Elastic aspects of domain quadruplets in ferroics. Mokrý, P.; Fousek, J. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p114104 

    Coexistence of ferroelectric ferroelastic domains in some materials plays an important role in practical area of domain engineering. Here the problem is discussed theoretically from the point of view of elastic aspects. Domain quadruplets are considered, i.e., systems of four ferroelastic...

  • Piezoresponse force microscopy of ferroelectric thin films: Frequency dependence of phase imaging. Morelli, A.; Palasantzas, G.; De Hosson, J. Th. M. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 11, p114109 

    The objective of this work is an evaluation of quantitative measurements of piezoresponse force microscopy for nanoscale characterization of ferroelectric films. To this end, we investigate how the piezoresponse phase difference Δ[uppercase_phi_synonym] between c domains depends on the...

  • Optical properties of δ-Bi2O3 thin films grown by reactive sputtering. Fan, H. T.; Teng, X. M.; Pan, S. S.; Ye, C.; Li, G. H.; Zhang, L. D. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p231916 

    The optical properties of δ-Bi2O3 thin films were investigated using spectroscopic ellipsometry and optical absorption spectrum. δ-Bi2O3 thin films were grown on Si and quartz substrates under different oxygen flow ratios (OFR) by radio frequency reactive magnetron sputtering. The...

  • Soft x-ray resonant reflectivity of low-Z material thin films. Cheng Wang; Araki, T.; Ade, H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p214109 

    Soft x-ray resonant reflectivity, a method for low-Z materials that combines aspects of neutron reflectivity and x-ray reflectivity, is presented. Resonant reflectivity provides enhanced and selective sensitivity to specific chemical moieties near the absorption edges of constituent elements and...

  • Realization of 10 Tbit/in.2 memory density and subnanosecond domain switching time in ferroelectric data storage. Cho, Yasuo; Hashimoto, Sunao; Odagawa, Nozomi; Tanaka, Kenkou; Hiranaga, Yoshiomi // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p232907 

    Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium...

  • Thin-Film Chip Resistors Challenge Traditional Thick-Film Devices.  // Power Electronics Technology;Nov2009, Vol. 35 Issue 11, p14 

    The article focuses on the use of thin-film chip resistors, which enable the design engineer to downsize the current design without sacrificing power-handling capabilities. It relates that improvements to the heat-withstanding and power-handling capabilities of thick-film inks on a ceramic...

  • ON THE OPTICAL DISPERSION PARAMETERS OF THIN FILM Al3+ DOPED ZnO TRANSPARENT CONDUCTING GLASSES. Oriaku, C. I.; Osuwa, J. C. // Journal of Ovonic Research;Dec2009, Vol. 5 Issue 6, p213 

    In this work, we present the results of the optical dispersions of undoped and Al3+ doped ZnO glassy thin films. The films transmission spectra were measured by spectrophotometry and film compositions were obtained using Rutherford backscattering spectrometry. Results show that the refractive...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics