Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

Matsuzaki, Kosuke; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202107
Academic Journal
Cu2O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities ∼90 cm2 V-1 s-1 comparable to those of single crystals (∼100 cm2 V-1 s-1). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (∼0.26 cm2 V-1 s-1 and ∼6, respectively).


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