Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Veal, T. D.; King, P. D. C.; Hatfield, S. A.; Bailey, L. R.; McConville, C. F.; Martel, B.; Moreno, J. C.; Frayssinet, E.; Semond, F.; Zúñiga-Pérez, J.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202108
Academic Journal
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.


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