GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

Mano, T.; Kuroda, T.; Mitsuishi, K.; Nakayama, Y.; Noda, T.; Sakoda, K.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203110
Academic Journal
We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.


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