TITLE

GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

AUTHOR(S)
Mano, T.; Kuroda, T.; Mitsuishi, K.; Nakayama, Y.; Noda, T.; Sakoda, K.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.
ACCESSION #
35514083

 

Related Articles

  • Strong directional dependence of single-quantum-dot fine structure. Stevenson, R. Mark; Young, Robert J.; See, Patrick; Norman, Carl E.; Shields, Andrew J.; Atkinson, Paola; Ritchie, David A. // Applied Physics Letters;9/26/2005, Vol. 87 Issue 13, p133120 

    By isolating quantum dots in microstructures with cleaved facets, we measure individual-quantum-dot photoluminescence emitted in the in-plane direction, in addition to the widely studied vertical direction. The emission is shown to be polarized in the plane, and the observed fine structure is...

  • Cluster State Entanglement of Semiconductor Quantum Dots Based on Faraday Rotation. Hua Wei; Yang, W.; Fei Zhou; Ranran Fang; Xiao-Long Zhang // International Journal of Theoretical Physics;Jun2009, Vol. 48 Issue 6, p1781 

    We propose a scheme for a large-scale cluster state preparation of single-charged semiconductor quantum dots utilizing Faraday rotation. Without interaction between quantum dots, the exciton induced Faraday rotation could distribute the spatially separate quantum dots into a quantum network...

  • Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions. Löffler, A.; Reithmaier, J. P.; Sçk, G.; Hofmann, C.; Reitzenstein, S.; Kamp, M.; Forchel, A. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p111105 

    Vertical-emitting AlAs/GaAs microcavity pillars with a type of GaInAs quantum dots within a one λ cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27...

  • Thermally activated carrier transfer among CdTe/ZnTe self-organized quantum dots. Tackeuchi, Atsushi; Miyata, Shogo; Sugawa, Seiji; Kusunoki, Koji; Tae Whan Kim; Jae-Ho Kim; Hong Seok Lee; Hong Lee Park // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112125 

    Carrier transfer among CdTe/ZnTe self-organized quantum dots (QDs) was studied using time-resolved photoluminescence (PL) measurements. The authors have confirmed that carriers in the high energy ground states of small QDs transfer to the lower-energy ground states of larger QDs even at 10 K....

  • Spin-polarized current and spin accumulation in a three-terminal two quantum dots ring. Feng Chi; Zheng, Jun; Lian-Liang Sun // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p172104 

    We study the coexistence of the spin-polarized current and the spin accumulation in a three-terminal quantum ring structure, in which two quantum dots (QDs) are inserted in one arm of the ring and the Rashba spin-orbit interaction (RSOI) exists in the other. We find that by properly adjusting...

  • Synthesis and photoluminescence of fluorinated graphene quantum dots. Feng, Qian; Cao, Qingqi; Li, Ming; Liu, Fuchi; Tang, Nujiang; Du, Youwei // Applied Physics Letters;1/7/2013, Vol. 102 Issue 1, p013111 

    Fluorinated graphene quantum dots (F-GQDs) were synthesized by cutting fluorinated graphene through a hydrothermal approach. The F-GQDs with oxygen-rich functional groups have a F/C atomic ratio of ca. 23.68% and diameter of 1-7 nm. The photoluminescence (PL) properties of the F-GQDs were...

  • EPITAXIALLY SELF-ASSEMBLED QUANTUM DOTS. Petroff, Pierre M.; Lorke, Axel; Imamoglu, Atac // Physics Today;May2001, Vol. 54 Issue 5, p46 

    Describes self-assembled quantum dots which are formed during the epitaxial growth process. Comparison of epitaxiallxy self-assembled quantum dots with lithographically defined quantum dots; Fabrication of self-assembled quantum dots; Electronic properties of quantum dots and rings;...

  • Current–voltage characteristics in strongly correlated double quantum dots. Feng Chi; Shu-Shen Li // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p123704 

    We have studied the current–voltage properties of a double quantum dot (DQD) connected by leads in arrangements that vary from series to symmetrical parallel configurations, in the presence of strong intradot Coulomb interaction. The influences of the connecting configurations and the...

  • Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots. Wang, Zh. M.; Mazur, Y. I.; Seydmohamadi, Sh.; Salamo, G. J.; Kissel, H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p213105 

    Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics