TITLE

Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography

AUTHOR(S)
Simms, R. J. T.; Pomeroy, J. W.; Uren, M. J.; Martin, T.; Kuball, M.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current collapse in AlGaN/GaN high electron mobility transistors was investigated using time-resolved Raman thermography. The virtual-gate mechanism was visualized by changes in the device temperature distribution, illustrating an effective gate lengthening up to 0.6 um. Two devices with different levels of current collapse are compared, demonstrating that the effective gate length increases for greater current collapse. A comparison of two-dimensional drift diffusion simulations with experimental data was used to estimate a lower limit for the charge trapping density in the virtual-gate region. This was found to be of the order of 2×1013 cm-2 for a device exhibiting relatively little current collapse.
ACCESSION #
35514072

 

Related Articles

  • Effects of nitrogen in Stone-Wales defect on the electronic transport of carbon nanotube. Wei, Jianwei; Hu, Huifang; Zeng, Hui; Wang, Zhiyong; Wang, Lei; Peng, Ping // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p092121 

    The effects of nitrogen substitutional doping in Stone-Wales (SW) defect on the transport properties of single-walled nanotubes are simulated by using density functional theory and nonequilibrium Green’s functions. It is found that the nitrogen in SW produces half-filled band near the...

  • The Doping Effect on the Lattices and Electronic Structure in Superconducting Fe-based Compounds Sr1− xK xFe2As2. Min Pan; Zheng Huang; Huan Feng Ma; Ya Jing Cui; Xin Sheng Yang; Yong Zhao // Journal of Superconductivity & Novel Magnetism;Aug2010, Vol. 23 Issue 6, p985 

    The lattices and density of states (DOS) for the novel superconductor Sr1− xK xFe2As2 ( x=0–1) are calculated based on the density functional theory with the scheme of the linearized augmented plane wave and the improved local orbital (APW+ lo). The effects of K-doping on the...

  • Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1). Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4672 

    For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm² V-1 s-1 and 1.75 × 1015 cm³ at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm² V-1s-1. To explain the temperature dependence of the mobility, we calculated...

  • Ti Kα radiography of Cu-doped plastic microshell implosions via spherically bent crystal imaging. King, J. A.; Akli, K.; Zhang, B.; Freeman, R. R.; Key, M. H.; Chen, C. D.; Hatchett, S. P.; Koch, J. A.; MacKinnon, A. J.; Patel, P. K.; Snavely, R.; Town, R. P. J.; Borghesi, M.; Romagnani, L.; Zepf, M.; Cowan, T.; Habara, H.; Kodama, R.; Toyama, Y.; Karsch, S. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191501 

    We show that short pulse laser generated Ti Kα radiation can be used effectively as a backlighter for radiographic imaging. This method of x-ray radiography features high temporal and spatial resolution, high signal to noise ratio, and monochromatic imaging. We present here the Ti Kα...

  • Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures. Sawano, K.; Toyama, K.; Masutomi, R.; Okamoto, T.; Usami, N.; Arimoto, K.; Nakagawa, K.; Shiraki, Y. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122109 

    Strain dependence of hole effective mass (m*) in the strained Ge channel was systematically studied, and monotonic m* reduction by more than 20% was clearly observed when the strain increased from 0.8% up to 2.8%. The scattering mechanism, which strongly depended on the modulation-doping...

  • Activation of ion implanted Si in GaN using a dual AlN annealing cap. Hager, C. E.; Jones, K. A.; Derenge, M. A.; Zheleva, T. S. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    A dual annealing cap composed of a thin, low temperature metal-organic chemical vapor deposition (MOCVD) deposited AlN adhesion layer and a thicker, sputtered AlN film for added mechanical strength enabled us to anneal Si-implanted layers for 30 min at temperatures up to 1250 °C. At higher...

  • Influence of Co Doping on the Zn Distribution in Nd1.05Ba1.95Cu3− xZn xO z. Lee, H. K.; Bae, S. M.; Choi, Y. N. // Journal of Superconductivity & Novel Magnetism;Jul2010, Vol. 23 Issue 5, p823 

    The structural effects of Zn doping and Zn, Co co-doping in Nd1.05Ba1.95Cu3O z have been investigated by using neutron diffraction. The Zn atoms are found to occupy exclusively the planar sites in Nd1.05Ba1.95Cu3− xZn xO z samples with x≤0.4. An orthorhombic-to-tetragonal transition...

  • Reversal of the resistive switching effect in electron-doped Ba0.6K0.4BiO3− x . Tulina, N. A.; Klinkova, L. A. // Journal of Experimental & Theoretical Physics;Aug2007, Vol. 105 Issue 1, p238 

    The effect of electron instability of heterojunctions based on Ba0.6K0.4BiO3− x single crystals has been found experimentally. This effect is shown to have the opposite sign along the electric field of the current compared to a similar effect observed in structures based on hole-doped...

  • Current Carriers Transport In High Uniaxially Strained Silicon. Kolomoets, V. V.; Baidakov, V. V.; Fedosov, A. V.; Gorin, A. E.; Ermakov, V. M.; Korbutyak, D. V.; Liarokapis, E.; Gromova, G. V.; Orasgulyev, B. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p55 

    We present the tensoresistivity effects which demonstrate the pressure-induced increase of the mobility of electrons and holes at certain orientations of uniaxial pressure X with reference to the [100] crystallographic axis. The uniaxially strained channels occur in silicon n-MOS-transistors and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics