TITLE

Doping of Ge–SixGe1-x core-shell nanowires using low energy ion implantation

AUTHOR(S)
Junghyo Nah; Varahramyan, K.; Liu, E.-S.; Banerjee, S. K.; Tutuc, E.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the doping of germanium (Ge)–silicon germanium (SixGe1-x) core-shell nanowires (NWs) by low energy (3 keV) boron (B) ion implantation. Ge–SixGe1-x core-shell NWs were implanted with B atoms at different doses from 1×1014 to 1×1015 cm-2, and subsequently annealed for dopant activation. Using four-point, gate-dependent resistance measurements, we determine the resistivity, doping levels, and contacts resistance of the B-doped Ge–SixGe1-x NWs. Our findings show that depending on the implantation dose, the doping level of B-doped NWs ranges from 1×1018 to 2×1020 cm-3.
ACCESSION #
35514068

 

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