Doping of Ge–SixGe1-x core-shell nanowires using low energy ion implantation

Junghyo Nah; Varahramyan, K.; Liu, E.-S.; Banerjee, S. K.; Tutuc, E.
November 2008
Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203108
Academic Journal
We investigate the doping of germanium (Ge)–silicon germanium (SixGe1-x) core-shell nanowires (NWs) by low energy (3 keV) boron (B) ion implantation. Ge–SixGe1-x core-shell NWs were implanted with B atoms at different doses from 1×1014 to 1×1015 cm-2, and subsequently annealed for dopant activation. Using four-point, gate-dependent resistance measurements, we determine the resistivity, doping levels, and contacts resistance of the B-doped Ge–SixGe1-x NWs. Our findings show that depending on the implantation dose, the doping level of B-doped NWs ranges from 1×1018 to 2×1020 cm-3.


Related Articles

  • FABRICATION OF BISMUTH NANOWIRE DEVICES USING FOCUSED ION BEAM MILLING. Cheng, H. H.; Alkaisi, M. M.; Wu, S. E.; Liu, C. P. // AIP Conference Proceedings;7/23/2009, Vol. 1151 Issue 1, p48 

    In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO2 substrates with...

  • Focused-ion-beam-induced deposition of superconducting nanowires. Sadki, E. S.; Ooi, S.; Hirata, K. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6206 

    Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a gallium focused ion beam and tungsten carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40%, 40%, and 20% for W, C, and...

  • Spin-splitting in an AlxGa1-xN/GaN nanowire for a quantum-ring interferometer. Ikai Lo; Wen-Yuan Pang; Yen-Liang Chen; Yu-Chi Hsu; Jih-Chen Chiang; Wei-Hsin Lin; Wan-Ting Chiu; Jenn-Kai Tsai; Chun-Nan Chen // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132114 

    An Al0.18Ga0.82N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov–de Haas oscillations in the nanowire with a spin-splitting energy of (2.4±0.3) meV. Based on the results, we proposed a...

  • Spin reorientation transitions in Pt/Co/Pt films under low dose Ga+ ion irradiation. Jaworowicz, J.; Maziewski, A.; Mazalski, P.; Kisielewski, M.; Sveklo, I.; Tekielak, M.; Zablotskii, V.; Ferré, J.; Vernier, N.; Mougin, A.; Henschke, A.; Fassbender, J. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022502 

    An elegant route for tuning the magnetic anisotropy of ultrathin Co films by Ga+ ion irradiation is presented. The magnetic anisotropy of a Pt/Co(2.6 nm)/Pt film is first changed from in-plane to out-of-plane by uniform low dose Ga+ ion irradiation at 30 keV. When increasing the dose, a second...

  • Comparison between bulk and nanoscale copper-silicide: Experimental studies on the crystallography, chemical, and oxidation of copper-silicide nanowires on Si(001). Ng, P. K.; Fisher, B.; Low, K. B.; Joshi-Imre, A.; Bode, M.; Lilley, C. M. // Journal of Applied Physics;May2012, Vol. 111 Issue 10, p104301 

    Self-assembled copper-silicide (Cu-Si) nanowires were prepared by the evaporation of Cu onto Si(001) under high vacuum conditions. The Cu-Si nanowires were studied in situ by scanning electron microscopy. Crystallographic, structural, and chemical properties of the nanowires were investigated by...

  • A Nanowire Growth Technique Utilizing Focused Ion Beams. Schoendorfer, C.; Lugstein, A.; Bischoff, L.; Hyun, Y. J.; Pongratz, P.; Bertagnolli, E. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p93 

    The impact of high energy Ga ion beams focused to diameters below 100nm on substrates such as Ge and Sb offers a new approach for the formation of nanowires. In contrast to several well-known processes for bottom-up fabrication of one-dimensional nanostructures, for this process neither...

  • Self-organized nanodot formation on MgO(100) by ion bombardment at high temperatures. Lu, M.; Yang, X. J.; Perry, S. S.; Rabalais, J. W. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2096 

    The production of self-organized, spatially dense nanodots on a MgO(100) surface by Ar[sup +] bombardment at elevated sample temperatures (700 and 1000 °C) and ion energies in the range 0.5-5 keV is reported. The results show that at elevated temperatures, the size of the nanodots can be...

  • Low energy cluster beam deposition: A novel approach to the synthesis of nanostructured materials. Iannotta, S.; Milani, P. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p979 

    Cluster beams produced by Pulsed Microplasma Cluster Sources (PMCS) and by hyperthermal supersonic seeded sources are very suitable to produce nanostructured materials with a free control on their structure, morphology and functional properties. Their major advantage is the possibility to...

  • Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires. Shan, C. X.; Liu, Z.; Hark, S. K. // Applied Physics Letters;2/18/2008, Vol. 92 Issue 7, p073103 

    We report temperature dependent photoluminescence studies on phosphorus doped ZnO nanowires. The shape of the spectra is very similar to those of phosphorus doped ZnO films. The photoluminescence spectrum at 10 K is dominated by neutral acceptor bound exciton (A 0X) emissions. The acceptor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics