TITLE

IBM intros 45-nm SOI foundry offering, maintains SOI competitive benefits to bulk CMOS

AUTHOR(S)
Deffree, Suzanne
PUB. DATE
November 2008
SOURCE
Electronic News (10616624);11/17/2008, Vol. 54 Issue 46, p1
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article reports on an announcement by International Business Machines Corp. (IBM) regarding the first 45-nm silicon-on-insulator (SOI) foundry offering. It states that IBM maintains that SOI offers significant performance improvements and power reductions when compared to bulk complementary metal oxide semiconductors (CMOS) technology. It mentions that while some industry players have argued against SOI because of its higher cost, IBM has been encouraging SOI since the 1990s.
ACCESSION #
35486942

 

Related Articles

  • High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing. Celler, G. K.; Hemment, P. L. F.; West, K. W.; Gibson, J. M. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p532 

    Ion beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high-speed complementary metal-oxide-semiconductor circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405 °C that produces silicon films of excellent quality,...

  • VSEA symposium provides perspective on implant roadmap. D.V. // Solid State Technology;Sep2002, Vol. 45 Issue 9, p26 

    Highlights the single-gate evolution to double-gate silicon-on-insulator (SOI) complementary metal oxide semiconductors. Preference to low temperature activation; Advantages of using SOI for radio frequency applications.

  • Design Tip: Eight SOI Advantages Every Designer Should Exploit.  // Electronic Design;1/18/2007, Vol. 55 Issue 2, p28 

    The article discusses the advantages of silicon-on-insulator (SOI) to chip designers over traditional generic complementary metal oxide semiconductor (CMOS). Exploiting the floating-body effect of a SOI transistor will allow a current drive increase that directly translates to a significant...

  • Intel vs IBM vs ST -- the battle for the future of process technology.  // Electronics Weekly;6/26/2013, Issue 2553, p4 

    The article reports on the competition among international semiconductor manufacturers for the future of process technology. Particular focus is given to the microprocessing potential of finfet on silicon-on-insulator (SOI) and fully-depleted SOI (FD-SOI). The battle between Intel Corp. and...

  • IBM details single-chip mobile device process; creates Common Platform IP portal. Mutschler, Ann Steffora // Electronic News;9/17/2007, Vol. 53 Issue 38, p17 

    The article reports on the launch of IBM Corp.'s CMOS 7RF silicon on insulator (SOI), a semiconductor manufacturing process aimed at allowing single-chip radio frequency (RF) devices through the integration of multiple RF/analog functions. The SOI process technology is conformed for RF switch...

  • IBM Builds Thin-Silicon SiGe Bipolar Transistor.  // Electronic News;10/6/2003, Vol. 49 Issue 40, pN.PAG 

    Reports on the development of a silicon germanium (SiGe) bipolar transistor on a thin silicon-on-insulator wafer chip design by IBM Corp. in October 2003. Benefits of the SOI design; Significance of the design to the wireless industry.

  • WORLDWIDE HIGHLIGHTS.  // Solid State Technology;May2004, Vol. 47 Issue 5, p14 

    Presents news developments in the seminconductor industry worldwide as of May 2004. Expansion of collaboration between IBM Corp. and Chartered to include a 'cross-foundry design enablement' program to support 90nm chip development; Samsung Electronics Co. Ltd.'s focus on development of 65nm and...

  • IBM links with Kodak for digital camera phones. Bush, Steve // Electronics Weekly;9/22/2004, Issue 2163, p5 

    This article reports that Kodak Co. and International Business Machines (IBM) Corp., are to develop image sensors for digital still cameras and camera phones. The deal also appears to allow IBM to offer image sensors based on the technology as part of its foundry services. Charged coupled device...

  • BiCMOS/SOI process is tuned for amplifiers. Verhoeven, Huibert // Electronics Weekly;10/19/2005, Issue 2214, p20 

    This article presents information on the use of bipolar complementary metal oxide semiconductors on silicon-on-insulator for high performance amplifiers application. The bipolar transistors are optimized to operate well under a wide range of operating currents thus enabling a diverse product...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics