Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

Nguyen, Binh-Minh; Hoffman, Darin; Delaunay, Pierre-Yves; Huang, Edward Kwei-Wei; Razeghi, Manijeh; Pellegrino, Joe
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163502
Academic Journal
We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAs/GaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M-structure superlattice as compared to the standard InAs/GaSb superlattice. Through the experimental realization of several p-Ï€-M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M-structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M-structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M-structured superlattice without bias dependent operation.


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