Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p162102
Academic Journal
Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4 Ω cm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92 cm2 and is furthermore shown to be stable under illumination at room temperature.


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