TITLE

Thin-film passivation by atomic layer deposition for organic field-effect transistors

AUTHOR(S)
Jeon, Hayoung; Shin, Kwonwoo; Yang, Chanwoo; Park, Chan Eon; Park, Sang-Hee Ko
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m2/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer.
ACCESSION #
35279333

 

Related Articles

  • Hydrogenation of ZnS passivation on narrow-band gap HgCdTe. White, J. K.; White, J.K.; Musca, C. A.; Musca, C.A.; Lee, H. C.; Lee, H.C.; Faraone, L. // Applied Physics Letters;4/24/2000, Vol. 76 Issue 17 

    Due to the narrow band gap of HgCdTe required for infrared photodetectors, the device performance is readily influenced by surface effects. This letter examines the effect that hydrogenation has on the quality of industry-standard ZnS passivating films. The hydrogenation is achieved by exposing...

  • Molecular beam epitaxy regrowth using a thin In layer for surface passivation. Peng, C.K.; Tu, S.L. // Applied Physics Letters;5/8/1995, Vol. 66 Issue 19, p2549 

    Examines the molecular beam epitaxy regrowth technique using a thin indium layer for surface passivation. Description of regrown pseudomorphic high electron mobility transistors; Results of depth profiling of indium-passivated sample; Comparison of conventional and regrowth samples of...

  • Megahertz operation of organic field-effect transistors based on poly(3-hexylthiopene). Wagner, Veit; Wöbkenberg, Paul; Hoppe, Arne; Seekamp, Jörg // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p243515 

    Switching speed is crucial for many applications in organic electronics. The possibility to achieve higher frequencies will enable new fields of applications. The authors demonstrate high-frequency organic thin film transistors based on poly(3-hexylthiophene). Transistors with submicron channel...

  • Gallium arsenide passivation through nitridation with hydrazine. Vogt, Kirkland W.; Kohl, Paul A. // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6448 

    Presents a study which analyzed the passivating films grown on gallium arsenide by direct nitridation with hydrazine using Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis. Uses of surface passivation; Several pretreatments of the gallium arsenide that were made;...

  • Passivation of defects in nitrogen-doped polycrystalline Cu[sub 2]O thin films by crown-ether cyanide treatment. Okamoto, Y.; Ishizuka, S.; Kato, S.; Sakurai, T.; Fujiwara, N.; Kobayashi, H.; Akimoto, K. // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1060 

    Crown-ether cyanide treatment, which simply involves immersion in KCN solutions containing 18-crown-6 followed by rinse, is studied in relation to electrical and optical properties of nitrogen-doped, polycrystalline Cu[sub 2]O thin films, and its effect is compared with that of hydrogen...

  • Passivation effects of alumina insulating layer on C[sub 60] thin-film field-effect transistors. Horiuchi, Kazunaga; Nakada, Kenji; Uchino, Shin; Hashii, Shinobu; Hashimoto, Akira; Aoki, Nobuyuki; Ochiai, Yuichi; Shimizu, Masaaki // Applied Physics Letters;9/2/2002, Vol. 81 Issue 10, p1911 

    A covering of an alumina insulating layer was deposited on the top of a C[sub 60] thin-film field-effect transistor (FET) by rf magnetron sputtering with Ar gas, in order to passivate the FET action from the degradation due to oxygen adsorption. The deposited alumina was amorphous and slightly...

  • Electrical and radiation assisted passivation of Ta2O5/Si interface. Hutson, J. M.; Devine, R. A. B.; Schrimpf, R. D. // Journal of Applied Physics;6/15/2004, Vol. 95 Issue 12, p8463 

    An unusual interface state passivation effect has been observed in Al/Ta2O5/Si capacitors. The effect is found for negative bias stress fields ∼-0.4 MV cm-1, it is also observed for positive bias fields if the structures are simultaneously x irradiated. The passivation relaxes if the...

  • Influence of plasticizers on the properties of edible films prepared from fish water-soluble proteins. Tanaka, Munehiko; Iwata, Kiyomi; Sanguandeekul, Romanee; Handa, Akihiro; Ishizaki, Shoichiro // Fisheries Science;Apr2001, Vol. 67 Issue 2, p346 

    SUMMARY: The effects of type and concentration of plasticizers on the mechanical properties and water vapor permeability (WVP) of edible films from fish water-soluble proteins (FWSP) were investigated. Among plasticizers investigated in the present study, glycerol and polyethylene glycol (PEG)...

  • Temperature Variation Effects on I-V Characteristics of Cu-Phthalocyanine based OFET. Zafar, Q.; Akram, R.; Karimov, Kh.S.; Khan, T. A.; Farooq, M.; Tahir, M. M. // World Academy of Science, Engineering & Technology;2011, Issue 58, p517 

    In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics