Thin-film passivation by atomic layer deposition for organic field-effect transistors

Jeon, Hayoung; Shin, Kwonwoo; Yang, Chanwoo; Park, Chan Eon; Park, Sang-Hee Ko
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163304
Academic Journal
The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m2/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer.


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