TITLE

Unidirectional formation of tetrahedral voids in irradiated silicon carbide

AUTHOR(S)
Kondo, S.; Katoh, Y.; Snead, L. L.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The {111} tetrahedral voids induced by neutron irradiation in 3C-SiC were found to be spatially oriented in only one of two possible directions. The tetrahedral shape was unexpected as the surface-to-volume ratio is larger than the alternative {111} octahedral void common in both metals and ceramics. From a geometric viewpoint, all faces of the observed voids are either Si- or C-terminated surfaces. By comparing the surface area with the octahedral void (composed of the both Si- and C-surfaces) of the same volume, the considerable difference in surface energy between the Si(111) and [formula] was implicated.
ACCESSION #
35279328

 

Related Articles

  • Defects in neutron irradiated SiC. Nagesh, V.; Farmer, J. W.; Davis, R. F.; Kong, H. S. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1138 

    Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as-grown and neutron irradiated epitaxially grown 3C-SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation...

  • Shear instability of nanocrystalline silicon carbide during nanometric cutting. Goel, Saurav; Luo, Xichun; Reuben, Robert L. // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p231902 

    The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene...

  • Characterization and Simulation of Neutron Irradiated JBS Silicon Carbide Diode Structures. Popelka, Stanislav; Hazdra, Pavel; Záhlava, Vít // Key Engineering Materials;2014, Vol. 605, p151 

    The effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4H-SiC epilayers was investigated. 1200V JBS diodes from Cree were irradiated in nuclear reactor by fast neutrons with fluences ranging from 1.3x1013 to 4x1014 cm-2 (1MeV NIEL equivalent in Si)....

  • The energetics of helium and hydrogen atoms in β-SiC: an ab initio approach. Kim, Jong; Kwon, Yong; Yonathan, Parlindungan; Hidayat, Ikhwan; Lee, June; Choi, Jung-Hae; Lee, Seung-Cheol // Journal of Materials Science;Apr2009, Vol. 44 Issue 7, p1828 

    Silicon carbide is a prime candidate for plasma-facing materials in future fusion reactors. The formation energies of various interstitial configurations of helium and hydrogen atoms in β-SiC were estimated based on density functional theory. Special consideration was given to the helium and...

  • Combustion Formation of Novel Nanomaterials: Synthesis and Cathodoluminescence of Silicon Carbide Nanowires. Savchyn, V.; Karbovnyk, I.; Popov, A. I.; Huczko, A. // Acta Physica Polonica, A.;Dec2009 Supplement, Vol. 116, pS.142 

    This paper presents the combustion synthesis and characterization of one-dimensional silicon carbide nanostructures (nanowires of 3C-SiC polytype with zincblend structure) by means of cathodoluminescence technique. Cathodoluminescence spectra of nano-SiC samples and, as a reference, of a...

  • Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects. Muzha, A.; Fuchs, F.; Tarakina, N. V.; Simin, D.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; Krueger, A.; Astakhov, G. V. // Applied Physics Letters;12/15/2014, Vol. 105 Issue 24, p1 

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication...

  • Phonon-polariton waves on the surface of SiC crystal. Kazantsev, D. V. // JETP Letters;6/15/2006, Vol. 83 Issue 8, p323 

    The excitation and propagation of traveling phonon-polariton waves on the surface of silicon carbide (SiC) excited by light at a frequency close to the lattice resonance have been investigated. These waves are excited in the presence of the boundary of a metal mask deposited on the crystal...

  • ADVANCED NON-DESTRUCTIVE ASSESSMENT TECHNOLOGY TO DETERMINE THE AGING OF SILICON CONTAINING MATERIALS FOR GENERATION IV NUCLEAR REACTORS. Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J. // AIP Conference Proceedings;6/23/2011, Vol. 1335 Issue 1, p1200 

    To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the...

  • The butterfly geometry: A Jahn–Teller view. Ceulemans, Arnout // Journal of Chemical Physics;6/1/1986, Vol. 84 Issue 11, p6442 

    The butterfly geometry of 62-electron tetranuclear metal clusters is explained as a special solution of the (T1+T2)×(e+t2) Jahn–Teller equation in a tetrahedral cluster. General expressions for the minimal roots of this equation are derived and represented on an O’Brien sphere....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics