Unidirectional formation of tetrahedral voids in irradiated silicon carbide

Kondo, S.; Katoh, Y.; Snead, L. L.
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163110
Academic Journal
The {111} tetrahedral voids induced by neutron irradiation in 3C-SiC were found to be spatially oriented in only one of two possible directions. The tetrahedral shape was unexpected as the surface-to-volume ratio is larger than the alternative {111} octahedral void common in both metals and ceramics. From a geometric viewpoint, all faces of the observed voids are either Si- or C-terminated surfaces. By comparing the surface area with the octahedral void (composed of the both Si- and C-surfaces) of the same volume, the considerable difference in surface energy between the Si(111) and [formula] was implicated.


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