TITLE

Near infrared organic light-emitting devices based on donor-acceptor-donor oligomers

AUTHOR(S)
Yang, Yixing; Farley, Richard T.; Steckler, Timothy T.; Eom, Sang-Hyun; Reynolds, John R.; Schanze, Kirk S.; Xue, Jiangeng
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report strong and efficient near infrared emission from organic light-emitting devices (OLEDs) based on two donor-acceptor-donor oligomers. These oligomers have fluorescent quantum yields of up to 20% and their energy gap can be tuned by changing the strengths of the donor and acceptor components. Electroluminescence with peak emission wavelengths of 692 and 815 nm were observed from the two oligomers studied here. External quantum efficiencies up to 1.6% and electrical-to-optical power efficiencies up to 7.0 mW/W were achieved in OLEDs based on these near-infrared emitters.
ACCESSION #
35279327

 

Related Articles

  • A highly efficient wide-band-gap host material for blue electrophosphorescent light-emitting devices. Whang, Dong Ryeol; You, Youngmin; Kim, Se Hun; Jeong, Won-Ik; Park, Young-Seo; Kim, Jang-Joo; Park, Soo Young // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p233501 

    We report on an efficient wide-band-gap host material for blue electrophosphorescence devices, namely, 1,2-trans-di-9-carbazolylcyclobutane (DCz). Photophysical studies show that lower-energy excimer formation between the carbazole units can be efficiently suppressed in a DCz film, thus...

  • Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p/ n/ n-Si:Er. Shmagin, V.; Kuznetsov, V.; Kudryavtsev, K.; Obolensky, S.; Kozlov, V.; Krasil'nik, Z. // Semiconductors;Nov2010, Vol. 44 Issue 11, p1486 

    The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) p/ n/ n-Si:Er, emitting under reverse bias on the p/ n junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavelength λ ≈ 1.5...

  • (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Bai, J.; Xu, B.; Guzman, F. G.; Xing, K.; Gong, Y.; Hou, Y.; Wang, T. // Applied Physics Letters;12/28/2015, Vol. 107 Issue 26, p1 

    We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire....

  • Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures. Park, Seoung-Hwan; Moon, Yong-Tae // Journal of Applied Physics;Aug2013, Vol. 114 Issue 8, p083107 

    Temperature characteristics of the light emission in blue InGaN/GaN quantum well (QW) structures were investigated using the multiband effective mass theory. The light emission intensity decreases gradually with increasing temperature because of the reduction in the optical matrix element due to...

  • 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates. Gallacher, K.; Velha, P.; Paul, D. J.; Cecchi, S.; Frigerio, J.; Chrastina, D.; Isella, G. // Applied Physics Letters;11/19/2012, Vol. 101 Issue 21, p211101 

    Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to recombination between the direct and...

  • p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes. Liu, Zhiqiang; Ma, Jun; Yi, Xiaoyan; Guo, Enqing; Wang, Liancheng; Wang, Junxi; Lu, Na; Li, Jinmin; Ferguson, Ian; Melton, Andrew // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p261106 

    In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The LEDs with p-InGaN/AlGaN EBL exhibited better optical performance over a wide range of carrier concentration due to the...

  • The effects of thin capping layers between quantum wells and barriers on the quantum efficiency enhancement in InGaN-based light emitting diodes. Li, X.; Milton Yeh, Yea-Chuan; Yang, S. L.; Chen, J. C.; Chuang, Chih-Li; El-Ghoroury, Hussein S. // Applied Physics Letters;9/9/2013, Vol. 103 Issue 11, p111103 

    We discovered that adding H2 to the carrier gas in GaN barrier growth improved the light emitting diode (LED) peak quantum efficiency and shifted the efficiency maxima toward lower currents (∼20 mA). This implies that the Shockley-Read-Hall nonradiative process can be suppressed via the...

  • Electroluminescent measurement of the internal quantum efficiency of light emitting diodes. Getty, Amorette; Matioli, Elison; Iza, Michael; Weisbuch, Claude; Speck, James S. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181102 

    An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light to photons emitted directly from the...

  • Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes. Hee Jin Kim; Suk Choi; Seong-Soo Kim; Jae-Hyun Ryou; Yoder, P. Douglas; Dupuis, Russell D.; Fischer, Alec M.; Sun, Kewei; Ponce, Fernando A. // Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101102 

    Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics