Anisotropic in-plane strains in nonpolar AlN and AlGaN [formula] films grown on SiC [formula] substrates

Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p161908
Academic Journal
Nonpolar Al1-xGaxN (0≤x≤0.196) (1120) films were grown on 4H-SiC (1120) substrates by metal organic vapor phase epitaxy. Al1-xGaxN (0≤x≤0.057) films grew almost pseudomorphically on the substrates due to balanced in-plane stresses along [0001] and [1100], while Al1-xGaxN (0.057100] due to the absence of the balance. The crystal tilts of the films toward [0001] decreased monotonically with increasing Ga composition due to the correspondence between the (0001) plane distances of the films and the (0002) plane distance of substrates and due to a decrease in the in-plane strain along [0001].


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