Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal

Then, H. W.; Walter, G.; Feng, M.; Holonyak Jr., N.
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163504
Academic Journal
We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β(=ICO/IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the “faster” QW collector (reduced β) and differential gain, result in a higher 3 dB bandwidth (f3 dB=1/2πτ).


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