TITLE

Native-oxide-confined high-index-contrast λ=1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers

AUTHOR(S)
Liang, D.; Hall, D. C.; Huang, J. Y.-T.; Tsvid, G.; Mawst, L. J.
PUB. DATE
October 2008
SOURCE
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p161108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High performance native-oxide-confined high-index-contrast (HIC) ridge waveguide (RWG) diode lasers are fabricated in a strain-compensated In0.4Ga0.6As single quantum well structure by employing a deep dry etch plus nonselective O2-enhanced wet thermal oxidation process. The thermal native oxide grown on the etch-exposed RWG sidewalls of the Al0.74Ga0.26As waveguide cladding layers and GaAs core with GaAsP–InGaAs quantum well provides both strong optical and electrical confinements for the active region. Due to a smoothing of sidewall roughness by the O2-enhanced oxidation, the lasers exhibit a low internal loss in αi=7.2 cm-1 for a w=7.2 μm narrow stripe HIC RWG structure, only 53% larger than that of w=87.2 μm broad-area devices, enabling their room temperature operation at a low 300 A/cm2 threshold current density.
ACCESSION #
35279322

 

Related Articles

  • Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy. Penna, A. F. S.; Shah, Jagdeep; DiGiovanni, A. E.; Cho, A. Y.; Gossard, A. C. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p591 

    We report the measurement of the optical absorption spectra of single quantum wells of GaAs (104 Ã… thick) and InGaAs (75 Ã… thick) by photothermal deflection spectroscopy. The room-temperature spectra show distinct structure due to heavy- and light-hole excitons in both GaAs and InGaAs...

  • Strain-Compensated InGaAs/InGaAs Quantum Well Cell With 2 μm Band-Edge. Rohr, Carsten; Abbott, Paul; Ballard, Ian; Connolly, James P.; Barnham, Keith W. J.; Nasi, Lucia; Ferrari, Claudio; Lazzarini, Laura; Mazzer, Massimo; Roberts, John // AIP Conference Proceedings;2003, Vol. 653 Issue 1, p344 

    Strain-compensated Quantum Well Cells (QWCs) have been shown to extend the absorption to longer wavelengths than attainable with lattice-matched material, while retaining a similar or better dark current. This is of particular interest for thermophotovoltaic (TPV) applications with low...

  • Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness. Beernink, K. J.; York, P. K.; Coleman, J. J.; Waters, R. G.; Kim, J.; Wayman, C. M. // Applied Physics Letters;11/20/1989, Vol. 55 Issue 21, p2167 

    Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained-layer InxGa1-xAs-GaAs (x∼0.25, λ>1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well...

  • Coherent, monolithic two-dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission. Evans, G. A.; Bour, D. P.; Carlson, N. W.; Hammer, J. M.; Lurie, M.; Butler, J. K.; Palfrey, S. L.; Amantea, R.; Carr, L. A.; Hawrylo, F. Z.; James, E. A.; Kirk, J. B.; Liew, S. K.; Reichert, W. F. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2721 

    Two-dimensional coherent strained-layer InGaAs/AlGaAs quantum well laser arrays consisting of 100 (10×10) active elements have been fabricated and characterized. The central lobe of the far field has a full width at half power of 0.04°×1°. Observation of about 2 W peak power from...

  • Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures. Grunthaner, F. J.; Yen, M. Y.; Fernandez, R.; Lee, T. C.; Madhukar, A.; Lewis, B. F. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p983 

    We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.

  • Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy. Reithmaier, J.-P.; Cerva, H.; Lösch, R. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p48 

    We have studied strained InGaAs quantum wells with GaAlAs barriers, grown by molecular beam epitaxy, varying In content and well thickness. Photoluminescence measurements were made at 12 K. The appearance of a characteristic additional exciton-like photoluminescence peak indicates the transition...

  • InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics. Temkin, H.; Tanbun-Ek, T.; Logan, R. A.; Lewis, J. A.; Dutta, N. K. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1222 

    We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current...

  • Strained InGaAs/InP quantum well lasers. Temkin, H.; Tanbun-Ek, T.; Logan, R. A. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1210 

    Quantum well lasers based on strained InxGa1-xAs/InP were grown by atmospheric pressure metalorganic vapor phase epitaxy. Buried-heterostructure lasers with the active layer consisting of three quantum wells, each ∼50 Å thick, placed in a continuously graded waveguide, exhibit threshold...

  • Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/GaAs quantum wells based on time-resolved pump and probe differential photoluminescence. Xiaodong Mu; Ding, Yujie J.; Ooi, Boon S.; Hopkinson, Mark // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181924 

    The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics