Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Ahnood, Arman; Ghaffarzadeh, Khashayar; Nathan, Arokia; Servati, Peyman; Li, Flora; Esmaeili-Rad, Mohammad R.; Sazonov, Andrei
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163503
Academic Journal
Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility.


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