Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack

Wang, J. G.; Kim, Jiyoung; Kang, Chang Yong; Lee, Byoung Hun; Jammy, Raj; Choi, Rino; Kim, M. J.
October 2008
Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p161913
Academic Journal
The tensile stress induced by the metal TiN film in the atomic layer deposited HfO2/TiN stacks has been found from the crystallite coalescence mechanism of the Volmer–Weber-type growth mode at the early stage of the TiN film formation. The higher tensile stress induced by 3 nm TiN film than that by the 20 nm TiN film resulted from the smaller grain size and the [200] orientation of the TiN layer. Electron energy loss spectrum profile shows that there is no significant elemental interdiffusion between HfO2 and TiN, which could contribute to stress relaxation.


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