Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Jeon, Kichan; Kim, Changjung; Song, Ihun; Park, Jaechul; Kim, Sunil; Kim, Sangwook; Park, Youngsoo; Park, Jun-Hyun; Lee, Sangwon; Kim, Dong Myong; Kim, Dae Hwan
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182102
Academic Journal
In order to model dc characteristics of n-channel amorphous InGaZnO thin-film transistors from experimentally obtained density of states (DOS), the acceptorlike DOS is extracted from the optical response of capacitance-voltage characteristics and confirmed by the technology computer-aided design (TCAD) simulation comparing with the measured data. Extracted DOS is a linear superposition of two exponential functions (tail and deep states), and its incorporation into TCAD model reproduces well the experimental current-voltage characteristics over the wide range of the gate and drain voltages. The discrepancy at higher gate voltage is expected to be improved by incorporating a gate voltage-dependent mobility in the model.


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