Solution-processed trilayer inorganic dielectric for high performance flexible organic field effect transistors

Tan, H. S.; Kulkarni, S. R.; Cahyadi, T.; Lee, P. S.; Mhaisalkar, S. G.; Kasim, J.; Shen, Z. X.; Zhu, F. R.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183503
Academic Journal
High performance organic field effect transistors using a solution-processable processed trilayer sol-gel silica gate dielectric architecture fabricated on plastic substrates exhibited low driving voltages of -3.0 V, high saturation mobilities of ∼3.5 cm2/V s, and on-off current ratio of 105. The enhancement in field effect mobility is attributed to improved dielectric-semiconductor interfacial morphology and increased capacitance of the tristratal dielectric. The pentacene devices displayed no signs of electrical degradation upon bending through a bending radius of 24 mm, 2.27% strain. The slight increase in the drain currents upon bending strain was investigated using Raman spectroscopy, which revealed enhanced in-phase intermolecular coupling.


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