Electrically pumped ultraviolet ZnO diode lasers on Si

Chu, Sheng; Olmedo, Mario; Yang, Zheng; Kong, Jieying; Liu, Jianlin
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181106
Academic Journal
Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm2. The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.


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