Origin of highly spatially selective etching in deeply implanted complex oxides

Ofan, Avishai; Gaathon, Ophir; Vanamurthy, Lakshmanan; Bakhru, Sasha; Bakhru, Hassaram; Evans-Lutterodt, Kenneth; Osgood, Richard M.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181906
Academic Journal
The origin of the rate of anomalously high spatially selective etching of a buried heavily implanted region in complex oxides is studied. Single-crystal LiNbO3 samples are prepared with a 0.4 μm wide implanted region at depth of 10 μm, using 5×1016 cm-2 fluence of 3.8 MeV He+, and wet etched after a low-temperature anneal. An etch-rate enhancement of 104 is found after implantation and low-temperature 175–275 °C post-implantation annealing. Experiments using time-resolved optical microscopy, x-ray diffraction, and proximal-probe microscopy show that this enhancement arises from the more rapid etch-solution transport in the microdomain network formed in the implanted region after annealing.


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