TITLE

Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

AUTHOR(S)
Wang, W. H.; Han, W.; Pi, K.; McCreary, K. M.; Miao, F.; Bao, W.; Lau, C. N.; Kawakami, R. K.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the growth of MgO films on graphene by molecular beam epitaxy and find that surface diffusion promotes a rough morphology. To reduce the mobility of surface atoms, the graphene surface is dressed by Ti atoms prior to MgO deposition. With as little as 0.5 ML (monolayer) of Ti, the MgO overlayer becomes atomically smooth. Furthermore, no aggregation of MgO is observed at the edges of the graphene sheet. These results are important for the fabrication of nanoscale electronic and spintronic devices.
ACCESSION #
35279208

 

Related Articles

  • Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. Barate, P.; Liang, S.; Zhang, T. T.; Frougier, J.; Vidal, M.; Renucci, P.; Devaux, X.; Xu, B.; Jaffrès, H.; George, J. M.; Marie, X.; Hehn, M.; Mangin, S.; Zheng, Y.; Amand, T.; Tao, B.; Han, X. F.; Wang, Z.; Lu, Y. // Applied Physics Letters;7/7/2014, Vol. 105 Issue 1, p1 

    An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection...

  • Effect of deposition conditions on nanowhisker morphology. Dubrovskii, V. G.; Soshnikov, I. P.; Sibirev, N. V.; Cirlin, G. �; Ustinov, V. M.; Tchernycheva, M.; Harmand, J. C. // Semiconductors;Jul2007, Vol. 41 Issue 7, p865 

    The results of theoretical investigation of the effect of deposition conditions on the morphological properties of nanowhiskers (nanowires) in different growth technologies are presented. The dependences of the whisker length on their radius, temperatures, deposition rate, density, and average...

  • MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy. Craft, H. S.; Ihlefeld, J. F.; Losego, M. D.; Collazo, R.; Sitar, Z.; Maria, J.-P. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p212906 

    We report on the epitaxial deposition of magnesium oxide films with [111] crystallographic orientation on (0002) GaN by molecular beam epitaxy. Specifically, we use an adsorption controlled growth mechanism to initiate the growth process. Electron diffraction shows a spotty intense pattern...

  • Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy. Miao, G. X.; Chang, J. Y.; van Veenhuizen, M. J.; Thiel, K.; Seibt, M.; Eilers, G.; Münzenberg, M.; Moodera, J. S. // Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142511 

    Epitaxial growth of MgO barrier on Si is of technological importance due to the symmetry filtering effect of the MgO barrier in conjunction with bcc-ferromagnets. We study the epitaxial growth of MgO on (100)-Si by molecular beam epitaxy. MgO matches Si with 4:3 cell ratio, which renders Fe to...

  • Block-by-block deposition: A new growth method for complex oxide thin films. Locquet, Jean-Pierre; Catana, Andre // Applied Physics Letters;1/17/1994, Vol. 64 Issue 3, p372 

    Examines the use of molecular beam deposition as an alternative growth method for critical temperature oxide thin films. Aim in providing crystal film quality; Provision of substrate coverage, controlled reaction path and reduced lateral growth by the method; Dominance of diffusion over the...

  • Silicon interstitial injection during dry oxidation of SiGe/Si layers. Napolitani, E.; di Marino, M.; de Salvador, D.; Carnera, A.; Spadafora, M.; Mirabella, S.; Terrasi, A.; Scalese, S. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p036106 

    The injection of Si self-interstitial atoms during dry oxidation at 815 °C of very shallow SiGe layers grown on Si (001) by molecular-beam epitaxy (MBE) has been investigated. We first quantified the oxidation enhanced diffusion (OED) of two boron deltas buried into the Si underlying the...

  • Model for molecular-beam-epitaxy growth over nonplanar surfaces. Ohtsuka, Mitsuru; Miyazawa, Seiichi // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3522 

    Proposes a model for molecular-beam-epitaxy growth to describe the morphology formed on a nonplanar, profiled surface that may consist of multifaceted crystal structures. Explanation for the observed growth morphology; Factors that affect the formation of the morphology within the range of...

  • Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Hasan, M.-A.; Ni, W.-X. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p617 

    Presents information on a study which characterized the ambipolar diffusion coefficient in molecular-beam epitaxy (MBE)-grown layers. Growth of the MBE layers; Comparison of the measured diffraction change with the probe beam delay; Function of the transient grating method.

  • Ambipolar diffusion in strained Si1-xGex(100) layers grown by molecular beam epitaxy. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Ni, W.-X.; Hasan, M.-A.; Hansson, G. V.; Sundgren, J.-E. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1471 

    Presents a study which investigated ambipolar diffusion in strained Si[sub1-x]Ge[subx](100) layers grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics