Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

Wang, W. H.; Han, W.; Pi, K.; McCreary, K. M.; Miao, F.; Bao, W.; Lau, C. N.; Kawakami, R. K.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183107
Academic Journal
We investigate the growth of MgO films on graphene by molecular beam epitaxy and find that surface diffusion promotes a rough morphology. To reduce the mobility of surface atoms, the graphene surface is dressed by Ti atoms prior to MgO deposition. With as little as 0.5 ML (monolayer) of Ti, the MgO overlayer becomes atomically smooth. Furthermore, no aggregation of MgO is observed at the edges of the graphene sheet. These results are important for the fabrication of nanoscale electronic and spintronic devices.


Related Articles

  • Effect of deposition conditions on nanowhisker morphology. Dubrovskii, V. G.; Soshnikov, I. P.; Sibirev, N. V.; Cirlin, G. �; Ustinov, V. M.; Tchernycheva, M.; Harmand, J. C. // Semiconductors;Jul2007, Vol. 41 Issue 7, p865 

    The results of theoretical investigation of the effect of deposition conditions on the morphological properties of nanowhiskers (nanowires) in different growth technologies are presented. The dependences of the whisker length on their radius, temperatures, deposition rate, density, and average...

  • Model for molecular-beam-epitaxy growth over nonplanar surfaces. Ohtsuka, Mitsuru; Miyazawa, Seiichi // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3522 

    Proposes a model for molecular-beam-epitaxy growth to describe the morphology formed on a nonplanar, profiled surface that may consist of multifaceted crystal structures. Explanation for the observed growth morphology; Factors that affect the formation of the morphology within the range of...

  • Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Hasan, M.-A.; Ni, W.-X. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p617 

    Presents information on a study which characterized the ambipolar diffusion coefficient in molecular-beam epitaxy (MBE)-grown layers. Growth of the MBE layers; Comparison of the measured diffraction change with the probe beam delay; Function of the transient grating method.

  • Ambipolar diffusion in strained Si1-xGex(100) layers grown by molecular beam epitaxy. Grivickas, V.; Netiksis, V.; Noreika, D.; Petrauskas, M.; Willander, M.; Ni, W.-X.; Hasan, M.-A.; Hansson, G. V.; Sundgren, J.-E. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1471 

    Presents a study which investigated ambipolar diffusion in strained Si[sub1-x]Ge[subx](100) layers grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.

  • Surface diffusion length of Ga adatoms on (111)B surfaces during molecular beam epitaxy. Nomura, Y.; Morishita, Y. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1123 

    Measures the spatial variation of the growth rate on mesa-etched gallium arsenide (GaAs) (111)B surfaces during molecular beam epitaxy. Determination of surface diffusion length of Ga adatoms; Value of the diffusion length; Ways to measure the reflection high-energy electron diffraction intensity.

  • Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6. Tsu, R.; H.Z. Xiao; Kim, Y.-W.; Hasan, M.-A.; Birnbaum, H.K.; Greene, J.E.; Lin, D.-S.; Chiang, T.-C. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p240 

    Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 has been investigated using in situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy,...

  • Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si[sub 1 � ][sub x]Ge[sub x] Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH[sub 4]. Orlov, L. K.; Ivina, N. L.; Potapov, A. V. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1103 

    The main causes of the diffusion spreading of a solid-solution composition near the boundaries of the Si transport channel in a Si/Si[sub 1 � ][sub x]Ge[sub x] heterostructure grown by molecular-beam epitaxy combined with solid (Si) and gaseous (GeH[sub 4]) sources are considered. For the...

  • Ion beam enhanced diffusion of B during Si molecular beam epitaxy. Pukite, P. R.; Iyer, S. S.; Scilla, G. J. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p916 

    Enhanced diffusion of B is observed during the growth of ion bombarded epitaxial layers by Si molecular beam epitaxy. Ion-assisted methods are generally required for high levels of n-type doping, and we find that the damage caused by the low-level ion bombardment is responsible for the enhanced...

  • Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy. Gossmann, H.-J.; Vredenberg, A. M.; Rafferty, C. S.; Luftman, H. S.; Unterwald, F. C.; Jacobson, D. C.; Boone, T.; Poate, J. M. // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3150 

    Presents a study which compared diffusion in thin silicon films grown by solid-phase-epitaxy to diffusion in films grown by molecular beam epitaxy. Experimental details; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics