TITLE

Large tunnel magnetoresistance in Co2FeAl0.5Si0.5/MgO/Co2FeAl0.5Si0.5 magnetic tunnel junctions prepared on thermally oxidized Si substrates with MgO buffer

AUTHOR(S)
Wang, Wenhong; Sukegawa, Hiroaki; Shan, Rong; Inomata, Koichiro
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetic tunnel junctions (MTJs) using polycrystalline Co2FeAl0.5Si0.5 (CFAS) electrodes with a MgO tunnel barrier were fabricated onto thermally oxidized Si substrates. Highly (001)-oriented and B2-ordered CFAS electrodes were obtained by optimizing growth conditions and postannealing temperature. The microfabricated MTJs exhibited relatively high tunnel magnetoresistance (TMR) ratios of 125% at room temperature and 196% at 7 K. The large TMR obtained using oxidized Si substrates indicates that CFAS is promising for the practical applications.
ACCESSION #
35279206

 

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