Large tunnel magnetoresistance in Co2FeAl0.5Si0.5/MgO/Co2FeAl0.5Si0.5 magnetic tunnel junctions prepared on thermally oxidized Si substrates with MgO buffer

Wang, Wenhong; Sukegawa, Hiroaki; Shan, Rong; Inomata, Koichiro
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182504
Academic Journal
Magnetic tunnel junctions (MTJs) using polycrystalline Co2FeAl0.5Si0.5 (CFAS) electrodes with a MgO tunnel barrier were fabricated onto thermally oxidized Si substrates. Highly (001)-oriented and B2-ordered CFAS electrodes were obtained by optimizing growth conditions and postannealing temperature. The microfabricated MTJs exhibited relatively high tunnel magnetoresistance (TMR) ratios of 125% at room temperature and 196% at 7 K. The large TMR obtained using oxidized Si substrates indicates that CFAS is promising for the practical applications.


Related Articles

  • Spin polarization of Co–Fe alloys estimated by point contact Andreev reflection and tunneling magnetoresistance. Karthik, S. V.; Nakatani, T. M.; Rajanikanth, A.; Takahashi, Y. K.; Hono, K. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07C916 

    The compositional dependence on spin polarization of Co100-xFex alloys has been studied by point contact Andreev reflection (PCAR) and tunneling magnetoresistance (TMR) measurements. The intrinsic spin polarization for bcc Co75Fe25 alloy is P=0.58±0.03 at 4.2 K contrary to the pure Fe...

  • Enhanced low-field magnetoresistance in La0.67Sr0.33MnO3:MgO composite films. Staruch, M.; Hires, D.; Chen, A.; Bi, Z.; Wang, H.; Jain, M. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p113913 

    In this paper, we report low-field magnetoresistance observed in preferentially c-axis oriented La0.67 Sr0.33MnO3:MgO composite films fabricated on (001) LaAlO3 substrates using a hybrid solution route. Addition of MgO in the composite film results in lowering of Curie temperature (∼300 K)...

  • An active tunneling model for the magnetotransport in mixed-phase polycrystalline manganites. Ju, Sheng; Li, Zhen-Ya // Journal of Applied Physics;3/15/2004, Vol. 95 Issue 6, p3093 

    Based on phase separation between metallic and insulating domains, the evolution of magnetoresistance in mixed-phase polycrystalline manganites, as a function of temperature, has been modeled via a bond-disordered random resistor network. The tunneling bond is introduced in the resistor network...

  • Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates. Sugahara, Satoshi; Tanaka, Masaaki // Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1969 

    We have fabricated fully epitaxial single-crystal MnAs/A1As/MnAs magnetic tunnel junctions (MTJs) grown by molecular-beam epitaxy on vicinal GaAs(lll)B substrates. After the bottom MnAs layer was grown at 250 °C, the successive AlAs tunnel barrier and the top MnAs layer were grown at a lower...

  • Spin hopping in a discontinuous La[sub 0.7]Ca[sub 0.3]MnO[sub 3] film. Ziese, Michael // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2144 

    Magnetization and magnetotransport properties of a discontinuous La[sub 0.7]Ca[sub 0.3]MnO[sub 3] film on LaAlO[sub 3] are presented. The sample shows transport characteristics of a granular ferromagnet with an extraordinarily large magnetoresistance. The data are successfully interpreted within...

  • Spin filter based tunnel junctions. Chapline, Michael G.; Wang, Shan X. // Journal of Applied Physics;12/15/2006, Vol. 100 Issue 12, p123909 

    A theoretical estimate is given for the magnetoresistance ratio in ferromagnetic metal /nonmagnetic insulator/magnetic insulator/metallic junctions. Such a device has the potential to exhibit a room temperature magnetoresistive effect much larger than conventional magnetic tunnel devices. A half...

  • Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes. Wang, Y. Y.; Song, C.; Wang, G. Y.; Zeng, F.; Pan, F. // Applied Physics Letters;11/11/2013, Vol. 103 Issue 20, p202403 

    Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling...

  • Electrically controllable conductance and tunneling magnetoresistance through a topological insulator quantum well coupled to ferromagnetic electrodes. Guo, Junji; Bao, Hairui; Liao, Wenhu; Zhao, Heping // Applied Physics A: Materials Science & Processing;Nov2014, Vol. 117 Issue 3, p1025 

    We theoretically investigate the electrically controllable conductance and tunneling magnetoresistance (TMR) through a two-dimensional topological insulator (TI) quantum well sandwiched between ferromagnetic (FM) electrodes in the method of nonequilibrium Green's function (GF). It is...

  • Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/Al[sub 2]O[sub 3]/Co tunnel junctions. LeClair, P.; Swagten, H. J. M.; Swagten, H.J.M.; Kohlhepp, J. T.; Kohlhepp, J.Y.; de Jonge, W. J. M.; de Jonge, W.J.M. // Applied Physics Letters;6/19/2000, Vol. 76 Issue 25 

    Tunneling magnetoresistance (TMR), dynamic resistance and bias dependence measurements were performed on Co/Al[sub 2]O[sub 3]/Co magnetic tunnel junctions with a thin Cu layer inserted at either the Co/Al[sub 2]O[sub 3] ("bottom") or Al[sub 2]O[sub 3]/Co ("top") interfaces. Careful comparative...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics