Atomic layer structure of manganese atoms on wurtzite gallium nitride [formula]

Chinchore, Abhijit; Wang, Kangkang; Lin, Wenzhi; Pak, Jeongihm; Smith, Arthur R.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181908
Academic Journal
Submonolayer quantities of Mn are deposited on wurtzite GaN [formula]. The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3× reconstruction along [1010], but only 1× along [1120]. Diffraction analysis shows that the 3× streak intensity is maximized at ≈0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the [1010] direction with a spacing of 3a/2 along chains and 3a/2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a 3×3-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed.


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