TITLE

Atomic layer structure of manganese atoms on wurtzite gallium nitride [formula]

AUTHOR(S)
Chinchore, Abhijit; Wang, Kangkang; Lin, Wenzhi; Pak, Jeongihm; Smith, Arthur R.
PUB. DATE
November 2008
SOURCE
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Submonolayer quantities of Mn are deposited on wurtzite GaN [formula]. The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3× reconstruction along [1010], but only 1× along [1120]. Diffraction analysis shows that the 3× streak intensity is maximized at ≈0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the [1010] direction with a spacing of 3a/2 along chains and 3a/2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a 3×3-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed.
ACCESSION #
35279187

 

Related Articles

  • On the period of reflection high-energy electron diffraction intensity oscillations during Si molecular-beam epitaxy on vicinal Si(001). Zandvliet, H. J. W.; Elswijk, H. B.; Dijkkamp, D.; van Loenen, E. J.; Dieleman, J. // Journal of Applied Physics;9/1/1991, Vol. 70 Issue 5, p2614 

    Presents information on a study which investigated the existence of reflection high-energy electron diffraction intensity oscillations with a period significantly different from an integer number of monolayers at growth conditions near step flow. Methods; Results; Discussion.

  • Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy. Clarke, Shaun; Vvedensky, Dimitri D. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2272 

    Examines the kinetics of molecular-beam epitaxy by means of Monte Carlo simulations in combination with an approach for monitoring surface growth by calculating the evolution of the surface step density. Correspondence of the evolution of the step density to reflection high energy electron...

  • Real-time investigation of In surface segregation in chemical beam epitaxy of.... Mesrine, M.; Massies, J. // Applied Physics Letters;6/17/1996, Vol. 68 Issue 25, p3579 

    Investigates the surface segregation of Ga[sub 0.5]In[sub 0.5]P/GaAs heterostructures by chemical beam epitaxy. Use of reflection high energy electron diffraction to evaluate the surface segregation process; Correlation between the incorporation rate of gallium and surface content of indium;...

  • Dynamic reflection high-energy electron diffraction observation of 3C-SiC(001) surface.... Yoshinobu, Tatsuo; Izumikawa, Iwao; Mitsui, Hideaki; Fuyuki, Takashi; Matsunami, Hiroyuki // Applied Physics Letters;11/25/1991, Vol. 59 Issue 22, p2844 

    Examines the dynamic reflection high-energy electron diffraction of 3C-SiC(001) crystalline surface reconstruction under Si[sub 2]H[sub 6] beam irradiation. Change in the order of the surface structure; Amount of Si[sub 2]H[sub 6] required for the transitions; Support of the study for the...

  • Oxidation of the 3×3 6H-SiC (0001) adatom cluster: A periodic density functional theory and dynamic rocking beam analysis. Xianning Xie; Kian Ping Loh; Yakolev, Nikolai; Yang, S.W.; Ping Wu // Journal of Chemical Physics;9/1/2003, Vol. 119 Issue 9, p4905 

    The atomic reconstruction and the adsorption of oxygen on 6H-SiC (0001) surfaces have been investigated by reflection high energy electron diffraction (RHEED) dynamic rocking beam analysis. The various possible chemisorption states on the surface following the adsorption of one, two, and three...

  • Surface morphology of Si on Si(100) grown below 500 °C using H/Cl exchange chemistry. Koleske, D. D.; Gates, S. M. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4245 

    Presents a study which investigated the changes in surface structure for thin epitaxial silicon layers grown on silicon (100) using alternating exposures to silicon precursors. Comparison of the methods for growing silicon; Measurement of reflection high-energy electron diffraction patterns;...

  • Survival of atomic monolayer steps during oxide desorption on GaAs (100). Lee, J. H.; Wang, Zh. M.; Salamo, G. J. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114330 

    Significant surface pitting and a degraded surface roughness are almost always observed on GaAs (100) surface after conventional thermal oxide desorption. Here we report on the use of a Ga-triggered low temperature oxide desorption method that can be used to preserve the atomic monolayer (ML)...

  • Surface pole figures by reflection high-energy electron diffraction. Tang, F.; Wang, G.-C.; Lu, T.-M. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p241903 

    The authors demonstrated that it is possible to construct a reflection high-energy electron diffraction (RHEED) pole figure of a polycrystalline film by recording multiple RHEED patterns as they rotate the substrate around the surface normal. Since electrons have limited penetration depth, the...

  • Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001). Aarts, J.; Gerits, W. M.; Larsen, P. K. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p931 

    Intensity oscillations have been found in the specular beam of reflection high-energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics