High-performance millimeter-wave superlattice electronic devices

Eisele, Heribert; Farrer, Ian; Linfield, Edmund H.; Ritchie, David A.
November 2008
Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182105
Academic Journal
Negative differential resistance devices, based on two similar AlAs/GaAs superlattice structures, were fabricated using a standard selective etching and integral heat sink technology and evaluated in a resonant-cap full-height WR-15 waveguide cavity. Devices from both superlattice structures generated comparable output powers in the fundamental mode at 59–71 GHz. The best devices yielded >80 mW (with corresponding dc-to-RF conversion efficiencies of >4.5%) around 63 GHz. In a second-harmonic mode, these devices yielded up to 14 mW (1%) at 133 GHz. Higher harmonic frequencies were also observed with powers of >0.4 mW at 190 GHz and >0.1 mW at 260 GHz. The highest observed dc-to-RF conversion efficiency was 5.1% at 62.8 GHz.


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